| PART |
Description |
Maker |
| RD16HHF1 RD16HHF111 |
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
|
Mitsubishi Electric Semiconductor
|
| NTE236 |
Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| MAAPGM0076-DIE |
Amplifier, Power, 16W 1.3-2.5 GHz
|
MACOM[Tyco Electronics]
|
| DER-51 |
16W Power Supply using TOP243P
|
POWERINT[Power Integrations, Inc.]
|
| APV-1612 APV-16-12 APV-16-15 APV-16-24 APV-16-5 |
16W Single Output Switching Power Supply
|
Mean Well Enterprises Co., Ltd.
Mean Well Enterprises C...
|
| APC-16-350 APC-16-700 |
16W Single Output Switching Power Supply
|
Mean Well Enterprises Co., Ltd.
http://
|
| RM06F1302CT RM06F1102CT RM06F1000CT RM06F1003CT RM |
RESISTOR, 13K, 1/10W, 1%, 603 RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 13000 ohm, SURFACE MOUNT, 0603
RES,11.0K,1/16W,1%,THICKFILM,0603 RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 11000 ohm, SURFACE MOUNT, 0603
RES,SMD,100 OHMS,1%,0.125W,R0603 RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603
RES,100K,1/16W,1%,THICKFILM,0603 RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 100000 ohm, SURFACE MOUNT, 0603
10 KOHM 1/16W 1% 200 PPM SMD, 0603 RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 10000 ohm, SURFACE MOUNT, 0603
1M 1% 1/16W 0603 RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 1000000 ohm, SURFACE MOUNT, 0603
|
Cal-Chip Electronics
|
| MICRF002BM MICRF002 MICRF022BM MICRF022BN MICRF002 |
QwikRadiotm Low Power UHF Receiver Preliminary Information
/022 QwikRadioTM Low Power UHF Receiver
RES, 1.3K, 1/16W, TKF, 1%, 0603
RESISTOR,FIXED,FILM,CHIP,
|
MICREL[Micrel Semiconductor]
Micrel Semiconductor,Inc.
|
| MGFC42V5964A |
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M68719 68719 |
From old datasheet system
1240-1300MHZ, 12.5V, 16W, FM MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| MGFC42V7785A_04 MGFC42V7785A MGFC42V7785A04 |
7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
|
